Title Modular teaching and learning offers for contemporary and needed further education
Project Number D/04/B/F/PP-146 157
Product Investigation of electrical and optical properties of Si delta-doped GaAs MSM photodetectors
Title Investigation of electrical and optical properties of Si delta-doped GaAs MSM photodetectors
Product Type modules
Si delta-doped InGaAs/GaAs quantum well interdigital MSM photodetectors with different cap layer thickness were fabricated. Main goal is to find out the undoped GaAs cap layer thickness which has influence on electrical and optical properties of the device.
Applied optics institutes
I-V characteristic, spectral characteristicsch as well as time response of Si delta-doped InGaAs/GaAs quantum well interdigital MSM photodetectors with different cap layer thickness were measured and discussed. As the thickness of undoped GaAs cap layer rises the device attributes limit to the undoped MSM photodetector properties. In the range of 30 – 100 nm depth of quantum well the turning point voltage varies in the range 1 – 6 V. In photocurrent spectra absorption peak corresponding to the optical transition e2-hh2 is observable. As the undoped GaAs cap layer thickness increases the rise and fall time in the range 20 – 120 nm generally decreases and is less dependent on applied voltage. For practical purposes it is important to optimize the interdigital MSM photodetector for required application.
Area of application
Optical communication systems,
Appropriate test circuit
Designed device – ready for usage